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Tag: GaN

UMS Latest News – New GH25 PDK available

UMS new products: CHA2362-99F, very low noise Amplifier CHA6551-99F, highly linear Power Amplifier New GH25 PDK available New features are now available in our GH25 Design Kit. In this new version, UMS foundry team gives you access to : • Compatibility with thermal simulation tool “ETH” from Keysight, allowing complete electro-thermal simulation of your assembled…
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UMS leads the European 5G GaN progam

The fifth generation (5G) communications technologies will provide internet access to a wide range of applications: from billions of low data rate sensors to high resolution video streaming. The 5G network is designed to scale across these different use cases and will use different radio access technologies for each one. To support very high data…
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MMIC (Monolithic Microwave IC) GaAs and GaN foundry for Telecom, Space, Defense, Automotive sectors.

CHV1203-FAA a new VCO

United Monolithic Semiconductors (UMS), European leader in RF MMIC products and foundry services for specialised markets, including Defence and Space, Telecommmunications, Automotive Radar and Industrial sensors, is pleased to announce the release of HV1203-FAA self-biased, fully integrated S Band HBT Voltage Controlled Oscillator compatible with space derating. This product is supplied in an hermetic metal…
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UMS GH25-10 GaN technology Space evaluated

 UMS is proud to announce that the GH25-10 MMIC GaN HEMT technology is successfully space evaluated and now part of the European Preferred Part list (EPPL) established by the European Space Agency ESA https://escies.org/download/ The reliability study and ESCC evaluation of the technology have been supported by ESA, French MoD and CNES. This GaN 0.25µm…
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UMS has launched 2 new VCOs operating in S and C band

The CHV1203-98F and CHV1206-98F are 2 fully integrated VCOs including negative resistor, varactors and buffer amplifiers. They exhibit high frequency stability and have been designed with space de-rating. Although designed for space, they are suitable for a wide range of applications including commercial communication systems. These circuits are manufactured using a 2µm InGaP HBT process.…
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