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Tag: GaAs

UMS Foundry training for MMIC design

UMS Foundry organises regular training for immediate design start ! Participants will get a clear understanding of the technology processes, design flow and techniques to realise effective designs using our latest toolkits. Course Objectives: The UMS foundry training course is the opportunity to access the complete GaAs and GaN MMIC design rules. Our course aims…
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MMIC Design Methodologies

Monolithic microwave integrated circuit, or MMIC is an Integrated Circuit (IC) device that operates at Microwave frequencies (300 MHz to 300 GHz). These devices typically perform functions such as High Power Amplifiers (HPA), Low-Noise Amplifiers (LNA) and Single Pole Double Throw (SPDT) Monolithic Microwave Integrated Circuit (MMIC) Switch. MMICs are dimensionally small (from around 1…
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UMS (United Monolithic Semiconductors) E-Letter April 2021

UMS join the 2021 Mobile World Congress From 28th of June to 1st of July 2021, UMS participate to the MWC Discover UMS latest solutions for 5G and Satcom READ MORE …   NIGAMIL a project to develop a European GaN source UMS is proud to have been entrusted by the French Defence Agency (DGA)…
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UMS CHA8212-99F & CHT4660-FAB

United Monolithic Semiconductors (UMS), European leader RF MMIC – Monolithic Microwave Integrated Circuit (GaAs, GaN, SiGe technologies) products and foundry services for Aerospace, Defence, Telecom, Automotive Radar and Industrial sensors. CHA8212-99F 25W X-Band High Power Amplifier Ref: CHA8212-99F-FULL-0358  (Ex AI1908) Product information: 25W X-Band GaN High Power Amplifier Very versatile amplifier 44dBm Pout @ 20dBm…
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CHA3409-98F a new wideband driver

United Monolithic Semiconductors (UMS) RF MMIC – Monolithic Microwave (GaAs, GaN, SiGe) products and foundry services announce the release of : CHA3409-98F a new wideband driver UMS new CHA3409-98F is a 25-45GHz wideband driver including self-biasing to reduce temperature impact The CHA3409-98F exhibits and excellent  PAE of 19% @ 1dBcomp with 19dBm Pout, a high linear gain…
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CHA2595-QDG, a new wideband LNA in QFN plastic package

UMS (United Monolitichs Semiconductors) develops its state of the art LNA offer with the CHA2595-QDG a new wideband and very low noise LNA covering 4 telecom bands.     This 27.5-43.5GHz LNA exhibits very low noise @ 2.3dB and low consumption at 3.3V@61mA. It is proposed in a low cost 4x4mm2 QFN plastic package. This circuit…
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UMS New GaN state-of-the-art transistor: CHK8013-99F

The CHK8013-99F is a new GaN wideband capability transistor covering DC to 10GHz It exhibits 14W of power and a very good PAE of 70%. It enables as much as 17dB gain and a consumption as low as 180mA @30V. Designers can use the CHK8013-99F in Pulsed and operating modes. This product requires an external…
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UMS Latest News – New GH25 PDK available

UMS new products: CHA2362-99F, very low noise Amplifier CHA6551-99F, highly linear Power Amplifier New GH25 PDK available New features are now available in our GH25 Design Kit. In this new version, UMS foundry team gives you access to : • Compatibility with thermal simulation tool “ETH” from Keysight, allowing complete electro-thermal simulation of your assembled…
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CHT3091-FAA a new Attenuator

The CHT3091-FAA is a wide-band internally matched DC-14GHz attenuator in a 6x6mm SMD hermetic ceramic package. This circuit features 15dBm typical input power @ 1dB compression (any attenuation between 1 and 14GHz) and 20dB dynamic range. It has 2dB insertion loss. This product is designed on an internal GaAs 0.7µm MESFET process (Space evaluated by…
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