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UMS GH25-10 GaN technology Space evaluated

UMS GH25-10 GaN technology Space evaluated

 UMS is proud to announce that the GH25-10 MMIC GaN HEMT technology is successfully space evaluated and now part of the European Preferred Part list (EPPL) established by the European Space Agency ESA https://escies.org/download/

The reliability study and ESCC evaluation of the technology have been supported by ESA, French MoD and CNES.

This GaN 0.25µm HEMT process is optimized for high power applications up to 20GHz. Its good HEMT noise performance also allows LNA design.

The MMIC process includes, precision TaN resistors, high values TiWSi resistors, MIM capacitors, inductors, air-bridges, via-holes through the substrate and two metal layers for interconnection.

READ MORE: www.ums-gaas.com


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