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Tag: GaN

EPC Space’s Rad Hard Products News

EPC Space provides revolutionary High-Reliability Radiation Hardened enhancement-mode Gallium Nitride Power management solutions for Space and other harsh environments. Radiation hardened GaN-based power devices address critical space-borne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters. EPC Space has been delivering space grade eGaN® discrete devices and modules…
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CHA6094-QKB: 35-42.5GHz 2W Packaged Power Amplifier

UMS (United Monolithic Semiconductors S.A.S.) relesed the CHA6094-QKB: 35-42.5GHz 2W Packaged Power Amplifier GaN Monolithic Microwave IC in SMD leadless package The CHA6094-QKB is a GaN packaged monolithic Power Amplifier operating in the 35-42.5GHz frequency range. It typically exhibits 33dBm saturated output power with 26dB small signal gain. The overall power supply is of 25V/150mA.…
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Wave SRL High-Quality products and services RF and Microwave

Wave SRL delivers High Quality products and consultancy services in the RF and Microwave field with more than 14 years of experience in the Defence, Telecom and Space markets. Wave SRL designs and manufactures both standard and custom RF and Microwave circuits: GaN Solid State Power Amplifiers for Radar, Jammers and Telecommunications; Transceivers for Datalinks…
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UMS Foundry wide range of solutions to develop MMICs.

UMS Foundry offers a wide range of solutions to develop, produce and qualify your own proprietary MMICs. For more than 25 years, UMS has been a leading provider of III-V open foundry services used for the design of state-of-the-art RF and microwave MMICs in the Defense, Space, Telecom and ISM markets. UMS GaAs and GaN-on-SiC…
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Why GaN for DC-DC Space Designs

Power electronics engineers are constantly working towards designs with higher efficiency and higher power density while maintaining high reliability and minimizing cost. Advances in design techniques and improved component technologies enable engineers to consistently achieve these goals. Power semiconductors are at the heart of these designs and their improvements are vital to better performance. In…
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New Ultra-Low On-Resistance Rad Hard eGaN FETs

New Ultra-Low On-Resistance 200 V and 300 V Rad-Hard GaN Power Devices Increase Power Density for Demanding Space Applications EPC Space introduces two new radiation-hardened (rad-hard) gallium nitride (GaN) devices in the high current “G-package” family for power conversion solutions in critical spaceborne and other high reliability environments. EPC Space announces the introduction of two new…
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EPC-Space Radiation-Hardened Gallium Nitride (Rad-Hard GaN)

Radiation-hardened electronics, referred to as RadHard, are electronic components that are designed and produced to be immune to the damaging exposure of radiation and extreme temperatures found in rugged environments, such as space. Unlike silicon-based technology, where special processing is required to protect the semiconductor against the total ionizing dose (TID) of the effects of radiation, the physical properties…
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CHA8262-99F, the New UMS GaN HPA

CHA8262-99F, the New UMS GaN HPA The CHA8262-99F is a new UMS GaN HPA covering 27.5-31.5GHz and exhibiting at Psat an excellent Pout of 41dBm and an excellent PAE of 25%. This HPA also features a high linear gain of 24dB and a low consumption of 20V @ 280mA. It benefits from a large operating…
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