Tag: GaN

UMS Unveils New GH10-10, 0.1-µm GaN Technology

UMS Unveils New GH10-10, 0.1-µm GaN Technology: A breakthrough in RF and Millimeter-Wave applications United Monolithic Semiconductors (UMS) is proud to announce that its new GH10-10 GaN technology is now fully qualified and already opened in production mode, empowering our customers with high performance, fast time-to-market and greater competitive advantages. Recognized as a European supplier…
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UMS new CHA8154-99F – 7.25-7.75GHz High Power Amplifier

The CHA8154-99F is a two-stage monolithic GaN Power Amplifier operating between 7.25 and 7.75GHz and typically providing 18W Output Power at 49% of Power Added Efficiency. This amplifier exhibits more than 6W linear Output Power associated to 17dBc NPR and 42% Power Added Efficiency. It also provides a typical small signal gain of 28.5dB. This…
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UMS Foundry training methodologies for GaN and GaAs technologies

United Monolithic Semiconductors (UMS) organises regular training for clear understanding of Technology Processes, Design flow and Techniques to realise effective designs using UMS latest toolkits. Course Objectives The objective of this Foundry training is to equip attendees with the optimal methodologies for utilising UMS GaN and GaAs technologies for RF and mmWave MMIC applications. This…
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UMS plastic QFN platform designed for GaN MMICs

United Monolithic Semiconductors (UMS) announce plastic QFN platform designed for GaN MMICs successfully evaluated by the CNES for Space applications. This recognition is included in Note 19 of ESA’s European Preferred Parts List (EPPL), making UMS the first supplier to achieve such an assessment for plastic packaging of GaN components. This milestone underlines UMS’ ongoing commitment…
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CHC6094-QKB, a 2W RF Front-End 37-41 GHz.

United Monolithic Semiconductors (UMS) continue product launch series with  CHC6094-QKB, a 2W RF Front-End 37-41 GHz. Product information: The CHC6094-QKB is a multi-function monolithic packaged front-end operating in 37-41GHz band with a low noise high linearity amplifier, input/output switches and a linear efficient High Power Amplifier. It suits well for 5G terrestrial networks, high-throughput Fixed Wireless Access and…
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CHA6354-QQA – 27.5-30GHz 4W HPA with SPDT

United Monolithic Semiconductors (UMS) continue product launch series with  CHA6354-QQA – 27.5-30GHz 4W HPA with SPDT. Product information: The CHA6354-QQA is a three stage monolithic GaN High Power Amplifier reaching 4W output power over 27.5-30GHz bandwidth. It includes a SPDT switch at the output. The CHA6354-QQA provides high linearity with low consumption. It is well suited…
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FOUNDRY INNOVATION BY UMS

UMS (United Monolithic Semiconductors) constantly innovate to make UMS open III-V foundry Technologies more and more efficient for customers, facilitating frequency rise and assembly in innovative ad-hoc solutions (BGA, etc.). Check out UMS new generations PH10-20 and PH25-20. Read More… United Monolithic Semiconductors Bât. Charmille – Parc Mosaic – 10, Avenue du Québec – 91140…
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CHA4252-QKB – a three stage GaN Power Amplifier 17.25 – 21.25GHz band

United Monolithic Semiconductors (UMS) announce the release of a new advanced information: CHA4252-QKB – a three stage GaN Power Amplifier in the 17.25 – 21.25GHz frequency band. Datasheet access for this AI: You can access our datasheet following this link Ref: AI24074140-CHA4252-Advanced Information Product information: UMS develops the CHA4252-QKB, a three-stage GaN Power Amplifier in…
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