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Tag: GaN

CHA4252-QKB – a three stage GaN Power Amplifier 17.25 – 21.25GHz band

United Monolithic Semiconductors (UMS) announce the release of a new advanced information: CHA4252-QKB – a three stage GaN Power Amplifier in the 17.25 – 21.25GHz frequency band. Datasheet access for this AI: You can access our datasheet following this link Ref: AI24074140-CHA4252-Advanced Information Product information: UMS develops the CHA4252-QKB, a three-stage GaN Power Amplifier in…
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CHA8618-99F monolithic GaN High Power Amplifier 6‑18GHz

United Monolithic Semiconductors (UMS) released of a new datasheet / product CHA8618-99F 6-18GHz HPA. Datasheet access: You can access our datasheet following this link Or through UMS Online Product Finder Tool Ref: DSCHA861841012 Product information: The CHA8618-99F is a monolithic GaN High Power Amplifier in the frequency band 6‑18GHz with a control interface for fast…
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UMS CHA6682-QKB GaN HPA in QFN package

United Monolithic Semiconductors (UMS) – Advanced-Information CHA6682-QKB – HPA 24-27.5GHz 4W GaN Monolithic Microwave IC in QFN package The CHA6682-QKB is a three-stage GaN High Power Amplifier in the frequency band 24-27.5GHz. This HPA typically provides 4W output power associated to 26% of Power Added Efficiency. The circuit exhibits a typical small signal gain of…
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Wave SRL High-Quality products and services RF and Microwave

Wave SRL delivers High Quality products and consultancy services in the RF and Microwave field with more than 14 years of experience in the Defence, Telecom and Space markets. Wave SRL designs and manufactures both standard and custom RF and Microwave circuits: GaN Solid State Power Amplifiers for Radar, Jammers and Telecommunications; Transceivers for Datalinks…
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EPC Space’s Rad Hard Products News

EPC Space provides revolutionary High-Reliability Radiation Hardened enhancement-mode Gallium Nitride Power management solutions for Space and other harsh environments. Radiation hardened GaN-based power devices address critical space-borne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters. EPC Space has been delivering space grade eGaN® discrete devices and modules…
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CHA6094-QKB: 35-42.5GHz 2W Packaged Power Amplifier

UMS (United Monolithic Semiconductors) relesed the CHA6094-QKB: 35-42.5GHz 2W Packaged Power Amplifier GaN Monolithic Microwave IC in SMD leadless package The CHA6094-QKB is a GaN packaged monolithic Power Amplifier operating in the 35-42.5GHz frequency range. It typically exhibits 33dBm saturated output power with 26dB small signal gain. The overall power supply is of 25V/150mA. It…
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UMS Foundry wide range of solutions to develop MMICs.

UMS Foundry offers a wide range of solutions to develop, produce and qualify your own proprietary MMICs. For more than 25 years, UMS has been a leading provider of III-V open foundry services used for the design of state-of-the-art RF and microwave MMICs in the Defense, Space, Telecom and ISM markets. UMS GaAs and GaN-on-SiC…
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New Ultra-Low On-Resistance Rad Hard eGaN FETs

New Ultra-Low On-Resistance 200 V and 300 V Rad-Hard GaN Power Devices Increase Power Density for Demanding Space Applications EPC Space introduces two new radiation-hardened (rad-hard) gallium nitride (GaN) devices in the high current “G-package” family for power conversion solutions in critical spaceborne and other high reliability environments. EPC Space announces the introduction of two new…
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