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Tag: GaN

Rad-Hard GaN Power Devices for Space Applications

Ultra-Low On-Resistance 100 V and 200 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications EPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) transistor family for critical spaceborne and other high reliability environments. Andover, MA.— July 2022 — EPC Space announces the introduction two new rad-hard GaN transistors with…
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Thank you for visiting our booth at EuMW 2022 Milano !

MICROREL Thanks all Visitors to our booth at European Microwave Week 2022 in Milano !          

UMS @ EuMW Milano 2022

We are proud to announce UMS will be attending EuMW Milano 2022 UMS will participate to EuMW Milano 2022 from 25th to 30th of September On the exhibition side (27-29th of September), UMS will be present on representative’s booth Microrel booth #A37 Come and visit us to discover our latest product and updates on our…
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UMS Technology for RF and mm-wave applications

The United Monolithic Semiconductors foundry offers to designers reliable high performance GaAs & GaN processes. Our technologies are proved by the successful implementation of many standard products for Defence, Aerospace, Telecom, Automotive and ISM. Our pHEMT, HBT, Schottky diode and passive technologies, based on a high throughput 4-inch manufacturing line, are available in open foundry…
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UMS will be at IMS show in Denver

Exhibition: 21-23 June 2022 UMS will be pleased to welcome you on our booth #2076. During this 3 day exhibition, UMS representatives will be available to discuss your needs and present our latest product innovation and foundry services. Conferences UMS will also actively participate to the IMS with the presentation of papers and through participation…
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UMS Foundry training for MMIC design

UMS Foundry organises regular training for immediate design start ! Participants will get a clear understanding of the technology processes, design flow and techniques to realise effective designs using our latest toolkits. Course Objectives: The UMS foundry training course is the opportunity to access the complete GaAs and GaN MMIC design rules. Our course aims…
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MMIC Design Methodologies

Monolithic microwave integrated circuit, or MMIC is an Integrated Circuit (IC) device that operates at Microwave frequencies (300 MHz to 300 GHz). Perform functions such as High Power Amplifiers (HPA), Low-Noise Amplifiers (LNA) and Single Pole Double Throw (SPDT) Switch. MMICs are dimensionally small (from around 1 mm² to 10 mm²) and can be mass-produced,…
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UMS (United Monolithic Semiconductors) E-Letter April 2021

UMS join the 2021 Mobile World Congress From 28th of June to 1st of July 2021, UMS participate to the MWC Discover UMS latest solutions for 5G and Satcom READ MORE …   NIGAMIL a project to develop a European GaN source UMS is proud to have been entrusted by the French Defence Agency (DGA)…
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UMS CHA8212-99F & CHT4660-FAB

United Monolithic Semiconductors (UMS), European leader RF MMIC – Monolithic Microwave Integrated Circuit (GaAs, GaN, SiGe technologies) products and foundry services for Aerospace, Defence, Telecom, Automotive Radar and Industrial sensors. CHA8212-99F 25W X-Band High Power Amplifier Ref: CHA8212-99F-FULL-0358  (Ex AI1908) Product information: 25W X-Band GaN High Power Amplifier Very versatile amplifier 44dBm Pout @ 20dBm…
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