Category: RF Microwave

CHA8265-98F – 27.5-31GHz 25W High Power Amplifier   Product Description: The CHA8265-98F is a 3-stage high power amplifier operating between 27.5 and 31GHz and providing typically 25W of saturated output…
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  UMS New GH10-10, 0.1-µm GaN Technology   Promising performance, good device robustness and reduced memory effect were achieved with a combination of process and device optimization. Large signal measurements…
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  UMS new product CHA2353-99F: 46-52GHz Low Noise Amplifier with Adjustable Gain Control   Product Description: The CHA2353-99F is a three stage monolithic Low Noise Amplifier, producing 24dB linear gain…
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  UMS launching new product: CHA8454-99F, a 10W 37.5-43.5GHz High Power Amplifier.   Product Description: The CHA8454-99F is a three stages High Power Amplifier operating between 37.5 and 43.5GHz and…
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UMS Unveils New GH10-10, 0.1-µm GaN Technology: A breakthrough in RF and Millimeter-Wave applications United Monolithic Semiconductors (UMS) is proud to announce that its new GH10-10 GaN technology is now…
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UMS New Product: CHA8107-QCB – 4.5-6.8GHz HPA The CHA8107–QCB is a two-stage GaN High Power Amplifier for the 4.5 – 6.8GHz frequency band. This HPA operates with a drain voltage…
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UMS is excited to announce that it has secured a four-year contract from the Banque Publique d’Investissement (BPI) aimed at accelerating the development of cutting-edge solutions for advanced 5G communication…
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