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Tag: GaN

CHA8262-99F, the New UMS GaN HPA

CHA8262-99F, the New UMS GaN HPA The CHA8262-99F is a new UMS GaN HPA covering 27.5-31.5GHz and exhibiting at Psat an excellent Pout of 41dBm and an excellent PAE of 25%. This HPA also features a high linear gain of 24dB and a low consumption of 20V @ 280mA. It benefits from a large operating…
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GSI Technology’s Radiation-Hardened and Radiation-Tolerant synchronous SRAMs

GSI Technology’s inaugural projects in the Aerospace and Defense industry are groups of Radiation-Hardened and Radiation-Tolerant synchronous SRAMs: A family of SigmaQuad-II+ products: available in 288Mb, 144Mb, and 72Mb densities, x18 and x36 configurations, On-Die Termination (ODT), and up to 350 MHz performance A family of SyncBurst & NBT products: available in 144Mb, 72Mb, and…
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Why GaN for DC-DC Space Designs

Power electronics engineers are constantly working towards designs with higher efficiency and higher power density while maintaining high reliability and minimizing cost. Advances in design techniques and improved component technologies enable engineers to consistently achieve these goals. Power semiconductors are at the heart of these designs and their improvements are vital to better performance. In…
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EPC-Space Rad-Hard GaN Power Devices for Space Applications

Ultra-Low On-Resistance 100 V and 200 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications   EPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) transistor family for critical spaceborne and other high reliability environments. Andover, MA.— July 2022 — EPC Space announces the introduction two new rad-hard GaN transistors…
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UMS CHA7452-99F a 35.5-40.5GHz GaN HPA

The CHA7452-99F is a 35.5-40.5GHz GaN HPA exhibiting 9W output power. This product exhibits a high  PAE of 24%, 29dB Linear Gain and low consumption of 290mA @ 20V.  With its low biaising voltage, the CHA7452-99F maintains a junction temperature below 160°C even in saturation       The typical power supply is 20V/290mA (quiescent…
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Thank you for visiting our booth at EuMW 2022 Milano !

MICROREL Thanks all Visitors to our booth at European Microwave Week 2022 in Milano !          

UMS @ EuMW Milano 2022

We are proud to announce UMS will be attending EuMW Milano 2022 UMS will participate to EuMW Milano 2022 from 25th to 30th of September On the exhibition side (27-29th of September), UMS will be present on representative’s booth Microrel booth #A37 Come and visit us to discover our latest product and updates on our…
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UMS Technology for RF and mm-wave applications

The United Monolithic Semiconductors foundry offers to designers reliable high performance GaAs & GaN processes. Our technologies are proved by the successful implementation of many standard products for Defence, Aerospace, Telecom, Automotive and ISM. Our pHEMT, HBT, Schottky diode and passive technologies, based on a high throughput 4-inch manufacturing line, are available in open foundry…
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