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Tag: Power

EPC Space’s Rad Hard Products News

EPC Space provides revolutionary High-Reliability Radiation Hardened enhancement-mode Gallium Nitride Power management solutions for Space and other harsh environments. Radiation hardened GaN-based power devices address critical space-borne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters. EPC Space has been delivering space grade eGaN® discrete devices and modules…
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EPC-Space Radiation-Hardened Gallium Nitride (Rad-Hard GaN)

Radiation-hardened electronics, referred to as RadHard, are electronic components that are designed and produced to be immune to the damaging exposure of radiation and extreme temperatures found in rugged environments, such as space. Unlike silicon-based technology, where special processing is required to protect the semiconductor against the total ionizing dose (TID) of the effects of radiation, the physical properties…
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Why GaN for DC-DC Space Designs

Power electronics engineers are constantly working towards designs with higher efficiency and higher power density while maintaining high reliability and minimizing cost. Advances in design techniques and improved component technologies enable engineers to consistently achieve these goals. Power semiconductors are at the heart of these designs and their improvements are vital to better performance. In…
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EPC-Space Rad-Hard GaN Power Devices for Space Applications

Ultra-Low On-Resistance 100 V and 200 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications   EPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) transistor family for critical spaceborne and other high reliability environments. Andover, MA.— July 2022 — EPC Space announces the introduction two new rad-hard GaN transistors…
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UMS CHA7452-99F a 35.5-40.5GHz GaN HPA

The CHA7452-99F is a 35.5-40.5GHz GaN HPA exhibiting 9W output power. This product exhibits a high  PAE of 24%, 29dB Linear Gain and low consumption of 290mA @ 20V.  With its low biaising voltage, the CHA7452-99F maintains a junction temperature below 160°C even in saturation       The typical power supply is 20V/290mA (quiescent…
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UMS new products CHA2595-98F / CHA3395-98F / CHR2270-QRG

United Monolithic Semiconductors (UMS) European leader in RF MMIC – Monolithic Microwave Integrated Circuit (GaAs, GaN, SiGe technologies) Products and Foundry services for Defence, Space, Telecom, Automotive, and Radar is pleased to inform about 3 New products: CHA2595-98F 27.5-43.5GHz Low Noise Amplifier Ref: CHA2595-98F-FULL-1168 Product information: Performance to highlight: Wideband LNA: 27.5-43.5GHz Designed for a…
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UMS New GaN state-of-the-art transistor: CHK8013-99F

The CHK8013-99F is a new GaN wideband capability transistor covering DC to 10GHz It exhibits 14W of power and a very good PAE of 70%. It enables as much as 17dB gain and a consumption as low as 180mA @30V. Designers can use the CHK8013-99F in Pulsed and operating modes. This product requires an external…
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MMIC (Monolithic Microwave IC) GaAs and GaN foundry for Telecom, Space, Defense, Automotive sectors.

CHV1203-FAA a new VCO

United Monolithic Semiconductors (UMS), European leader in RF MMIC products and foundry services for specialised markets, including Defence and Space, Telecommmunications, Automotive Radar and Industrial sensors, is pleased to announce the release of HV1203-FAA self-biased, fully integrated S Band HBT Voltage Controlled Oscillator compatible with space derating. This product is supplied in an hermetic metal…
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