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Space Components News

Space Components News from Renesas/Intersil, NanoXplore, Semicoa, Reflex Photonics and AirBorn. Renesas (Intersil) – ISL71934M – Radiation Tolerant SP2T RF Switch, 50MHz to 6GHz Renesas (Intersil) – ISL73141SEH – Radiation Tolerant 14-Bit 1MSPS SAR ADC NanoXplore – RadHard FPGA News SEMICOA – Rad Hard Transistors AirBorn – Macro D, Micro D, & Nano D connectors…
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UMS publishes 2 new products: CHA8212-99F & CHT4660-FAB

United Monolithic Semiconductors (UMS), European leader RF MMIC – Monolithic Microwave Integrated Circuit (GaAs, GaN, SiGe technologies) products and foundry services for Aerospace, Defence, Telecom, Automotive Radar and Industrial sensors. CHA8212-99F 25W X-Band High Power Amplifier Ref: CHA8212-99F-FULL-0358  (Ex AI1908) Product information: 25W X-Band GaN High Power Amplifier Very versatile amplifier 44dBm Pout @ 20dBm…
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NanoXplore FACTS SHEET quarterly

Major news are : NXmap3 news available from https://download.nanoxplore.com NG-Medium QML-V CQFP-352 qualification with Delta ESCC evaluation is completed. The DLA approval will come in coming weeks as well as the relevant SMD 5962F20217, The CLGA-625 qualification is still running as expected. NG-Large CLGA-1752 ESCC qualification is running, NG-Ultra v1 device evaluation almost completed. NG-Ultra final version…
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UMS RF MMIC – Monolithic Microwave

UMS (United Monolithic Semiconductors) European leader RF MMIC – Monolithic Microwave (GaAs, GaN, SiGe) products and foundry services for Aerospace, Defence,Telecom, Automotive, Radar and Industrial sensors applications. UMS will be present @ the EuMW 2020 edition which held on line from the 10th to the 15th of January. UMS will be pleased to welcome you…
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New SiC MOSFETs for Faster Switching and Higher Efficiency

SSDI Announces New SiC MOSFETs for Faster Switching and Higher Efficiency Solid State Devices, Inc. (SSDI) has expanded its hermetic SiC MOSFET offerings with the new SFC85N90 family. The SFC85N90 are enhancement mode, N-channel SiC MOSFETs. These fast switching devices offer a very low RDS(on) of only 13 mΩ typ and 17 mΩ max (@…
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CHP4010-99F a new X-Band (7-9GHz) phase shifter

United Monolithic Semiconductors (UMS) – European leader in RF MMIC – Monolithic Microwave Integrated Circuit (GaAs, GaN, SiGe technologies)  publishes a 6-bit digital X-Band phase shifter, the CHP4010-99F (7-9GHz). This product is proposed in bare die. The CHP4010-99F circuit exhibits a high phase accuracy with a RMS phase error of 1.5°,  a phase shift range…
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Apogee Semiconductor – TalRad™ Process Design

Apogee Semiconductor, a provider of technologies and products for space and other extreme environments, announced today their TalRad™ Process Design Kit is available for evaluation. The Transistor-Adjusted-Layout for Radiation (TalRad™) Process Design Kit (PDK) is a rad-hard process design methodology that improves the radiation performance of commercial process technologies, enabling the rapid creation of rad-hard designs…
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CHA3409-98F a new wideband driver

United Monolithic Semiconductors (UMS), European leader in RF MMIC – Monolithic Microwave Integrated Circuit (GaAs, GaN, SiGe technologies) products and foundry services announce the release of,  CHA3409-98F a new wideband driver UMS new CHA3409-98F is a 25-45GHz wideband driver including self-biasing to reduce temperature impact The CHA3409-98F exhibits and excellent  PAE of 19% @ 1dBcomp with 19dBm…
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CHA2595-QDG, a new wideband LNA in QFN plastic package

UMS (United Monolitichs Semiconductors) develops its state of the art LNA offer with the CHA2595-QDG a new wideband and very low noise LNA covering 4 telecom bands.     This 27.5-43.5GHz LNA exhibits very low noise @ 2.3dB and low consumption at 3.3V@61mA. It is proposed in a low cost 4x4mm2 QFN plastic package. This circuit…
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