New Ultra-Low On-Resistance Rad Hard eGaN FETs
New Ultra-Low On-Resistance 200 V and 300 V Rad-Hard GaN Power Devices Increase Power Density for Demanding Space Applications EPC Space introduces two new radiation-hardened (rad-hard) gallium nitride (GaN) devices in the high current “G-package” family for power conversion solutions in critical spaceborne and other high reliability environments. EPC Space announces the introduction of two new…
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