Category: MMIC

UMS New GH10-10, 0.1-µm GaN Technology

  UMS New GH10-10, 0.1-µm GaN Technology   Promising performance, good device robustness and reduced memory effect were achieved with a combination of process and device optimization. Large signal measurements were performed at 18 GHz, 30GHz, 45 GHz and 60 GHz. The results at 45 GHz have shown more than 46% of PAE, 11dB linear…
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UMS new product CHA2353-99F: 46-52GHz Low Noise Amplifier with Adjustable Gain Control

  UMS new product CHA2353-99F: 46-52GHz Low Noise Amplifier with Adjustable Gain Control   Product Description: The CHA2353-99F is a three stage monolithic Low Noise Amplifier, producing 24dB linear gain with 30dB Adjustable Gain Control (AGC) and 3.5dB Noise Figure in the frequency band 46-52GHz. It includes ESD protections on each RF access and DC…
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UMS new product CHA8454-99F, a 10W 37.5-43.5GHz High Power Amplifier

  UMS launching new product: CHA8454-99F, a 10W 37.5-43.5GHz High Power Amplifier.   Product Description: The CHA8454-99F is a three stages High Power Amplifier operating between 37.5 and 43.5GHz and providing typically 10W of saturated output power and more than 24% of Power Added Efficiency. The typical power supply is 20V/540mA (quiescent current). Thanks to…
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UMS Unveils New GH10-10, 0.1-µm GaN Technology

UMS Unveils New GH10-10, 0.1-µm GaN Technology: A breakthrough in RF and Millimeter-Wave applications United Monolithic Semiconductors (UMS) is proud to announce that its new GH10-10 GaN technology is now fully qualified and already opened in production mode, empowering our customers with high performance, fast time-to-market and greater competitive advantages. Recognized as a European supplier…
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UMS New Product: CHA8107-QCB – 4.5-6.8GHz HPA

UMS New Product: CHA8107-QCB – 4.5-6.8GHz HPA The CHA8107–QCB is a two-stage GaN High Power Amplifier for the 4.5 – 6.8GHz frequency band. This HPA operates with a drain voltage from 14V to 24V. Depending on the applied drain voltage, this HPA provides between 8W and 20W of saturated output power associated with 58% Power…
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UMS awarded contract to propel Advanced 5G Communication Solutions

UMS is excited to announce that it has secured a four-year contract from the Banque Publique d’Investissement (BPI) aimed at accelerating the development of cutting-edge solutions for advanced 5G communication systems. This initiative will also engage in pathfinding activities in collaboration with prominent academic institutions and industrial laboratories. As the overall coordinator of the CAPTIVANT2…
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UMS completion SMART3 of EC IPCEI Initiative for Advanced Packaging Solutions

United Monolithic Semiconductors (UMS) is proud to announce completion of participation in SMART3 as part of the European Commission’s IPCEI Initiative, paving the way for Advanced Packaging Solutions This collaboration built on the success of the earlier 5G_GaN2 project and marked a continued commitment to pioneering advanced packaging methods and heterogeneous integration in the semiconductor…
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UMS CHA8454-99F, a 37.5 – 43.5GHz, 10W High Power Amplifier.

UMS is launching the CHA8454-99F, a 37.5 – 43.5GHz, 10W High Power Amplifier. Reference: AI25125259 Product Description: The CHA8454-99F is a three stages High Power Amplifier operating between 37.5 and 43.5GHz and providing typically 10W of saturated output power and more than 24% of Power Added Efficiency. The typical power supply is 20V/540mA (quiescent current).…
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