UMS New GH10-10, 0.1-µm GaN Technology
UMS New GH10-10, 0.1-µm GaN Technology Promising performance, good device robustness and reduced memory effect were achieved with a combination of process and device optimization. Large signal measurements were performed at 18 GHz, 30GHz, 45 GHz and 60 GHz. The results at 45 GHz have shown more than 46% of PAE, 11dB linear…
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