UMS Foundry organises regular training for immediate design start ! Participants will get a clear understanding of the technology processes, design flow and techniques to realise effective designs using our latest toolkits. Course Objectives: The UMS foundry training course is the opportunity to access the complete GaAs and GaN MMIC design rules. Our course aims…
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Monolithic microwave integrated circuit, or MMIC is an Integrated Circuit (IC) device that operates at Microwave frequencies (300 MHz to 300 GHz). These devices typically perform functions such as High Power Amplifiers (HPA), Low-Noise Amplifiers (LNA) and Single Pole Double Throw (SPDT) Monolithic Microwave Integrated Circuit (MMIC) Switch. MMICs are dimensionally small (from around 1…
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UMS join the 2021 Mobile World Congress From 28th of June to 1st of July 2021, UMS participate to the MWC Discover UMS latest solutions for 5G and Satcom READ MORE … NIGAMIL a project to develop a European GaN source UMS is proud to have been entrusted by the French Defence Agency (DGA)…
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United Monolithic Semiconductors (UMS), European leader RF MMIC – Monolithic Microwave Integrated Circuit (GaAs, GaN, SiGe technologies) products and foundry services for Aerospace, Defence, Telecom, Automotive Radar and Industrial sensors. CHA8212-99F 25W X-Band High Power Amplifier Ref: CHA8212-99F-FULL-0358 (Ex AI1908) Product information: 25W X-Band GaN High Power Amplifier Very versatile amplifier 44dBm Pout @ 20dBm…
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UMS will be present @ the EuMW 2020 edition which held on line from the 10th to the 15th of January. UMS will be pleased to welcome you on our virtual booth (Exhibit Hall 4) and exchange with you on our latest solutions and innovations. UMS will also contribute to the EuMW event with the…
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United Monolithic Semiconductors (UMS) RF MMIC – Monolithic Microwave (GaAs, GaN, SiGe) products and foundry services announce the release of : CHA3409-98F a new wideband driver UMS new CHA3409-98F is a 25-45GHz wideband driver including self-biasing to reduce temperature impact The CHA3409-98F exhibits and excellent PAE of 19% @ 1dBcomp with 19dBm Pout, a high linear gain…
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UMS (United Monolitichs Semiconductors) develops its state of the art LNA offer with the CHA2595-QDG a new wideband and very low noise LNA covering 4 telecom bands. This 27.5-43.5GHz LNA exhibits very low noise @ 2.3dB and low consumption at 3.3V@61mA. It is proposed in a low cost 4x4mm2 QFN plastic package. This circuit…
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The CHK8013-99F is a new GaN wideband capability transistor covering DC to 10GHz It exhibits 14W of power and a very good PAE of 70%. It enables as much as 17dB gain and a consumption as low as 180mA @30V. Designers can use the CHK8013-99F in Pulsed and operating modes. This product requires an external…
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UMS announced the release of its new GaN HEMT 0.15µm technology during the EuMW show in Paris, GH15 is based on SiC substrate and is well-suited for a wide range of Military, Space and Telecom applications up to 35GHz. It enables the design of high power, high linearity and high PAE products. This technology exhibits…
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