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Rad-Hard GaN Power Devices for Space Applications

Rad-Hard GaN Power Devices for Space Applications

Ultra-Low On-Resistance 100 V and 200 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications

EPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) transistor family for critical spaceborne and other high reliability environments.

Andover, MA.— July 2022 — EPC Space announces the introduction two new rad-hard GaN transistors with ultra-low on-resistance and extremely low gate charge for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET.

These devices come packaged in hermetic packages in very small footprints.

Chip-scale versions of this device are available from EPC.

Part Number Drain to Source Voltage (VDS) Drain to Source Resistance (RDS(on)) Single-Pulse Drain Current (IDM) Package Size (mm) Total Dose for Space Level Applications Single Event (with VDS up to 100% of rated Breakdown) for Space Level Applications
EPC7018G 100 V 6 mΩ 345 A 8.0 x 5.6 Rated to 1000 krad SEE immunity for LET of 85 MeV/mg/cm2
EPC7007B 200 V 28 mΩ 80 A 5.7 x 3.9 Rated to 1000 krad SEE immunity for LET of 85 MeV/mg/cm2

With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.

Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.

For more details and Datasheets please visit : https://epc.space