EPC Space provides revolutionary High-Reliability Radiation-Hardened enhancement-mode Gallium Nitride (GaN) Power management solutions for Space and other harsh environments.
Radiation-hardened GaN-based power devices address critical spaceborne environments for applications including Power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
EPC Space products have been in orbit since 2019 with tens of thousands of units on board of satellites. Our units are on board satellites flying in LEO and GEO orbit with mission lives of 10+ years.
EPC is the largest producer of GaN-on-Si power devices and dominates the < 400 V market. VPT is a global leader in providing power conversion solutions for use in avionics, military, space, and industrial applications.
EPC Space is focused on designing and manufacturing radiation hardened (Rad Hard) GaN-on-silicon transistors and ICs packaged, tested, and qualified for satellite and high-reliability applications.
Radiation hardened GaN-based power devices address critical space-borne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.
EPC Space Products
Rad Hard GaN Packaged Discretes
EPC Space Rad Hard GaN discrete devices have been specifically designed for critical applications in the high reliability or commercial satellite space environments.
These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low RDS(on) values.
The lateral structure of the die provides for very low gate charge (QG) and extremely fast switching times. These features enable higher power densities, higher efficiencies and more compact and lighter packaging.
Rad Hard GaN Die on Ceramic Adaptor
The CDA series DIE of eGaN® switching power HEMTs from EPC Space have been specifically designed for critical applications in high reliability or commercial satellite space environments.
The die adaptor series allows easy PCB mounting for ‘plug and play’ functionality.
The low RDS(on) and very low gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact and lighter weight circuitry for critical space borne missions.
Rad Hard GaN Drivers and Power Stages
EPC Space Rad Hard GaN Drivers are optimized to drive Rad Hard GaN transistors in critical spaceborne systems.
Rad Hard Power Stages integrate a high-speed gate drive circuit with power switches to provide a complete power stage in a small package.
These devices are ideal for high speed DC-DC conversion, synchronous rectification, and multi-phase motor drives.
|For EPC Power Rad-Hard GaN devices Italy Market contact: DANILO LAUTA
Via Guido Rossa 34, CP.00065 – Fiano Romano, ROME, ITALY