UMS New GaN state-of-the-art transistor: CHK8013-99F
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The CHK8013-99F is a new GaN wideband capability transistor covering DC to 10GHz
It exhibits 14W of power and a very good PAE of 70%.
It enables as much as 17dB gain and a consumption as low as 180mA @30V.
Designers can use the CHK8013-99F in Pulsed and operating modes. This product requires an external matching circuitry.
This circuit is designed on an in-house GaN 0.25µm Hemt process.
This general purpose transistor is suitable for a wide range of RF power applications such as Radar and Telecommunication.
Main Features:
- RF Bandwidth: Up to 10GHz
- Psat: 14W
- PAE: 70% @Psat
- DC bias: Vd up to 30V
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