UMS new CHA8154-99F – 7.25-7.75GHz High Power Amplifier

The CHA8154-99F is a two-stage monolithic GaN Power Amplifier operating between 7.25 and 7.75GHz and typically providing 18W Output Power at 49% of Power Added Efficiency.

This amplifier exhibits more than 6W linear Output Power associated to 17dBc NPR and 42% Power Added Efficiency. It also provides a typical small signal gain of 28.5dB. This […]

The CHA8154-99F is a two-stage monolithic GaN Power Amplifier operating between 7.25 and 7.75GHz and typically providing 18W Output Power at 49% of Power Added Efficiency. This amplifier exhibits more than 6W linear Output Power associated to 17dBc NPR and 42% Power Added Efficiency. It also provides a typical small signal gain of 28.5dB.

This amplifier is well suited for radar and space communications as well as telecommunications.

The circuit is manufactured using a space evaluated, robust GaN-on-SiC HEMT process and is provided as a bare die for direct integration into hybrid circuits.

Datasheet Download 

Contacts:

United Monolithic Semiconductors
Bât. Charmille – Parc Mosaic – 10, Avenue du Québec – 91140 VILLEBON-SUR-YVETTE – France
Tel.: +33 (0) 1 69 86 32 00 – www.ums-rf.com

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