Tag: RF-Microwave

UMS New Product: CHA8107-QCB – 4.5-6.8GHz HPA The CHA8107–QCB is a two-stage GaN High Power Amplifier for the 4.5 – 6.8GHz frequency band. This HPA operates with a drain voltage…
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UMS is excited to announce that it has secured a four-year contract from the Banque Publique d’Investissement (BPI) aimed at accelerating the development of cutting-edge solutions for advanced 5G communication…
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United Monolithic Semiconductors (UMS) is proud to announce completion of participation in SMART3 as part of the European Commission’s IPCEI Initiative, paving the way for Advanced Packaging Solutions This collaboration…
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UMS is launching the CHA8454-99F, a 37.5 – 43.5GHz, 10W High Power Amplifier. Reference: AI25125259 Product Description: The CHA8454-99F is a three stages High Power Amplifier operating between 37.5 and…
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UMS CHA6357-98F, a 27 – 31GHz 5W High Power Amplifier  Product Description: The CHA6357-98F is a bare die three-stage GaN Power Amplifier operating between 27GHz and 31GHz. This amplifier typically…
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The CHA6357-98F is a bare die three-stage GaN Power Amplifier operating between 27GHz and 31GHz. This amplifier typically provides 5W of saturated Output Power associated to 23% and 24dB of…
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The CHA8282-99F is a three-stage GaN High Power Amplifier in the frequency band 27.5-31GHz. This HPA typically provides 10W output power associated to 33% of Power Added Efficiency. The circuit…
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UMS Foundry Offer has included low-cost packaging services for many years, available for GaAs technologies first and more recently for GaN technologies. We keep on working to enrich our packaging…
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