UMS launching new MMIC products

UMS CHA6357-98F, a 27 – 31GHz 5W High Power Amplifier 

Product Description:

The CHA6357-98F is a bare die three-stage GaN Power Amplifier operating between 27GHz and 31GHz.

This amplifier typically provides 5W of saturated Output Power associated to 23% and 24dB of Power Gain.

This amplifier exhibits 33dBm Linear Power with -30dBc ACPR and 27dB Gain. In addition, the CHA6357 provides high linearity with a low consumption when operated with output power back-off.

It therefore can be used as a Driver of HPA.

The component is internally matched to 50Ω at both the input and output.

It integrates output power detector and ESD RF protection.

It is manufactured on a robust GaN-on-SiC HEMT process.

It is well suited for VSAT, SatCom uplink, 5G communication and Radio links applications.

Main Product Features:

• Broadband performances: 27-31GHz
• 30dB of small signal gain
• 37dBm Pout for +14dBm Input power
• >35 dBc ACPR at 26dBm Output power (1)
• 23% PAE at 37dBm Output power
• DC bias: Vd=25V@Idq=140mA
• Output Power detector included
• Chip size: 2.5 x 1.6mm²
• Available as bare die

(1)       30MHz Modulation Bandwidth, 8PSK

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UMS CHA8282-99F, a 27.5-31GHz 10W Power Amplifier

Product Description:

The CHA8282-99F is a three-stage GaN High Power Amplifier in the frequency band 27.5-31GHz. This HPA typically provides 10W output power associated to 33% of Power Added Efficiency. The circuit exhibits a typical small signal gain of 27dB. The overall power supply is 22V/300mA.

The circuit is dedicated to Satcom and is also well suited for a wide range of microwave and millimetre wave applications and systems.

It is developed on a robust GaN-on-SiC HEMT process and will be available as a bare die. The input and output are matched to 50Ω and integrate ESD RF protection.

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UMS CHA8107-QCB, a 4.5 – 6.8 GHz HPA

Product Description:

The CHA8107-QCB is a two-stage GaN High Power Amplifier for the 4.5 – 6.8GHz frequency band.

This HPA operates with a drain voltage from 14V to 24V.

Depending on the applied voltage, this HPA provides between 8W and 20W of saturated output power associated with 58% Power Added Efficiency on average across the frequency band.

Designed for Radar application, it is also ideal for a wide range of microwave systems.

The product is developed on a robust GaN-on-SiC HEMT process and is available in a QFN plastic package.

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UMS CHA4262-QDG, a 17 – 22GHz Medium Power Amplifier

Product Description:

The CHA4262-QDG is a three-stage GaAs Medium Power Amplifier operating between 17GHz and 22GHz.

This amplifier provides 23dBm saturated output power with 37% Power Added Efficiency and 20dBm Output Power at 1dB gain compression.

The circuit exhibits a typical small signal gain of 26dB and 30dBm Output Third-Order Intercept Point.

This Medium Power Amplifier is dedicated to Space applications and it is also ideal for a wide range of microwave systems.

This new product is matched to 50Ω and supplied on RoHS 4 mm x 4 mm QFN plastic package.

 

Main Product Features:

• Frequency band: 17-22GHz
• 23dBm POUT at 37% PAE
• 26dB small signal gain
• NPR = 12dBc at 22dBm Average Pout(1)
• Typical DC bias: VD = 2.5V@IDQ = 130mA
• 24L-QFN 4x4mm²
• MSL3

(1)     Bandwidth = 1GHz, Notch = 10%

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UMS CHA1252-QDG |  11-18GHz LNA 

Product Description:

The CHA1252-QDG is a three-stage Low Noise Amplifier operating in the 11 – 18GHz frequency band.

This LNA typically presents low Noise Figure of 1.3dB associated to a small signal gain of 26dB.

It can provide up to 7dBm output power at 1dB gain compression and needs DC power supply of 2V/30mA.

It is available in 4×4 plastic package.

Designed for space applications, it is also ideal for a wide range of microwave systems.

This product is developed using a GaAs pHEMT process and is provided on low cost SMD RoHS compliant QFN plastic package.

Main Product Features:

• Frequency range : 11 – 18 GHz
• Linear Gain : 26dB
• NF : 1.3dB
• OP1dB : 7dBm
• OIP3 : 18dBm
• DC bias: Vd = 2V @Idq = 30mA
• 24 Leads – QFN 4x4mm2
• MSL1

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UMS CHA1351-QAG, a 24-32GHz LNA

Product Description:

The CHA1351-QAG is a three-stage Low Noise Amplifier operating in the 24 – 32GHz frequency band.

This LNA typically presents low Noise Figure of 1.3dB associated to a small signal gain of 24dB.

It can provide up to 5dBm output power at 1dB gain compression and needs DC power supply of 2V/30mA. It is available in 3×3 plastic package.

Designed for space applications, it is also ideal for a wide range of microwave systems.

This product is developed using a GaAs pHEMT process and is provided on low cost

SMD RoHS compliant QFN plastic package.

Main Product Features:

• Frequency range : 24 – 32 GHz
• Linear Gain : 24dB
• NF : 1.3dB
• OP1dB : 5dBm
• OIP3 : 15dBm
• DC bias: Vd = 2V @Idq = 30mA
• 16 Leads – QFN 3x3mm2
• MSL1

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UMS CHA8154-99F, a 7.25 – 7.75GHz High Power Amplifier.

Product Description:

The CHA8154-99F is a two-stage monolithic GaN Power Amplifier operating between 7.25 and 7.75GHz and typically providing 18W Output Power at 49% of Power Added Efficiency.

This amplifier exhibits more than 6W linear Output Power associated to 17dBc NPR and 42% Power Added Efficiency. It also provides a typical small signal gain of 28.5dB.

This amplifier is well suited for radar and space communications as well as telecommunications.

The circuit is manufactured using a space evaluated, robust GaN-on-SiC HEMT process and is provided as a bare die for direct integration into hybrid circuits.

 

Main Product Features:

• Frequency range: 7.25 – 7.75 GHz
• High output power: 18W
• High PAE: 49%
• Linear Gain: 28.5dB
• DC bias: VD = 28V & Idq = 330mA
• Chip size: 5.14 x 4.22mm²
• Available as bare die

 

Our team remains at your disposal for any further information.

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Contacts:

United Monolithic Semiconductors
Bât. Charmille – Parc Mosaic – 10, Avenue du Québec – 91140 VILLEBON-SUR-YVETTE – France
Tel.: +33 (0) 1 69 86 32 00 – www.ums-rf.com

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