UMS New Product: CHA8107-QCB – 4.5-6.8GHz HPA

UMS New Product: CHA8107-QCB – 4.5-6.8GHz HPA

The CHA8107–QCB is a two-stage GaN High Power Amplifier for the 4.5 – 6.8GHz frequency band.

This HPA operates with a drain voltage from 14V to 24V. Depending on the applied drain voltage, this HPA provides between 8W and 20W of saturated output power associated with 58% Power Added Efficiency on average across the frequency band.

Designed for Radar application, it is also ideal for a wide range of microwave systems.

The product is developed on a robust GaN-on-SiC HEMT process with humidity protection and is available in a QFN plastic package.

More details on UMS website directly HERE

Our team remains at your disposal for any further information.

Contacts:

United Monolithic Semiconductors
Bât. Charmille – Parc Mosaic – 10, Avenue du Québec – 91140 VILLEBON-SUR-YVETTE – France
Tel.: +33 (0) 1 69 86 32 00 – www.ums-rf.com

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