UMS New GH10-10, 0.1-µm GaN Technology

UMS New GH10-10, 0.1-µm GaN Technology

Promising performance, good device robustness and reduced memory effect were achieved with a combination of process and device optimization. Large signal measurements were performed at 18 GHz, 30GHz, 45 GHz and 60 GHz.

The results at 45 GHz have shown more than 46% of PAE, 11dB linear gain and 2.5 W.mm-1 output power. At 60 GHz, a maximum PAE of 31-33% is obtained.

The nonlinear electrical model accuracy is proven with the HPA designed at Q-Band and showing promising results.

UMS GH10-10 Key Specifications at a Glance:

MMIC Power amplifiers and LNAs in 100-nm GaN on SiC European technology for Q/V band VHTS and constellations.

We remain at your disposal for any additional information.

Contacts:

United Monolithic Semiconductors
Bât. Charmille – Parc Mosaic – 10, Avenue du Québec – 91140 VILLEBON-SUR-YVETTE – France
Tel.: +33 (0) 1 69 86 32 00 – www.ums-rf.com

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