UMS CHA6357-98F, a 27 – 31GHz 5W High Power Amplifier
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The CHA6357-98F is a bare die three-stage GaN Power Amplifier operating between 27GHz and 31GHz.
This amplifier typically provides 5W of saturated Output Power associated to 23% and 24dB of Power Gain.
This amplifier exhibits 33dBm Linear Power with -30dBc ACPR and 27dB Gain. In addition, the CHA6357 provides high linearity with a low consumption when operated with output power back-off.
It therefore can be used as a Driver of HPA.
The component is internally matched to 50Ω at both the input and output.
It integrates output power detector and ESD RF protection.
It is manufactured on a robust GaN-on-SiC HEMT process.
It is well suited for VSAT, SatCom uplink, 5G communication and Radio links applications.
Main Product Features:
- Broadband performances: 27-31GHz
- 30dB of small signal gain
- 37dBm Pout for +14dBm Input power
- >35 dBc ACPR at 26dBm Output power (1)
- 23% PAE at 37dBm Output power
- DC bias: Vd=25V@Idq=140mA
- Output Power detector included
- Chip size: 2.5 x 1.6mm²
- Available as bare die
- 30MHz Modulation Bandwidth, 8PSK
Access to the datasheet:
You can access the datasheet through UMS online product finder or by following this link.
Reference: DSCHA63575239
Our team remains at your disposal for any further information.
Contacts:
United Monolithic Semiconductors
Bât. Charmille – Parc Mosaic – 10, Avenue du Québec – 91140 VILLEBON-SUR-YVETTE – France
Tel.: +33 (0) 1 69 86 32 00 – www.ums-rf.com
MICROREL – Via Guido Rossa 34, CP.00065 – Fiano Romano, ROME, ITALY
Email: danilo.lauta@microrel.com
Phone : +39 334 9529414
Web: www.microrel.com
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