UMS Unveils New GH10-10, 0.1-µm GaN Technology

UMS Unveils New GH10-10, 0.1-µm GaN Technology: A breakthrough in RF and Millimeter-Wave applications

United Monolithic Semiconductors (UMS) is proud to announce that its new GH10-10 GaN technology is now fully qualified and already opened in production mode, empowering our customers with high performance, fast time-to-market and greater competitive advantages.

Recognized as a European supplier leader for innovative GaAs and GaN processes, UMS serves leading industries including defense, aerospace, telecommunications, automotive, and industrial markets.

Driving innovation forward, UMS sets new standards in performance with GH10-10 for low-noise, RF switches and High-Power Amplifiers (HPA) MMIC solutions with unmatched efficiency.

Valeria Di Giacomo-Brunel, Head of UMS Product Solutions & Foundry Services, emphasized the importance of this new technology launch, stating: “GH10-10 represents a major leap forward in our technology roadmap, enabling high frequency operation beyond V band with a good device robustness. By integrating GH10-10 technology into market, our GaN platform reaches new levels of performance and capability, empowering more advanced and competitive solutions to push the boundaries of RF and mm-wave performance.”

Key highlights of GH10-10:

Read full release on our homepage

Get the GH10 Flyer with technical data

Contacts:

United Monolithic Semiconductors
Bât. Charmille – Parc Mosaic – 10, Avenue du Québec – 91140 VILLEBON-SUR-YVETTE – France
Tel.: +33 (0) 1 69 86 32 00 – www.ums-rf.com

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