UMS CHA8282-99F three-stage GaN HPA 27.5-31GHz

The CHA8282-99F is a three-stage GaN High Power Amplifier in the frequency band 27.5-31GHz.

This HPA typically provides 10W output power associated to 33% of Power Added Efficiency.

The circuit exhibits a typical small signal gain of 27dB. The overall power supply is 22V/300mA.

The circuit is dedicated to Satcom and is also well suited for a wide range of microwave and millimetre wave applications and systems.

It is developed on a robust GaN-on-SiC HEMT process and will be available as a bare die. The input and output are matched to 50Ω and integrate ESD RF protection.

Access the datasheet:

You can access the datasheet through this link.

Our team remains at your disposal for any further information.

Contacts:

United Monolithic Semiconductors
Bât. Charmille – Parc Mosaic – 10, Avenue du Québec – 91140 VILLEBON-SUR-YVETTE – France
Tel.: +33 (0) 1 69 86 32 00 – www.ums-rf.com

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