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UMS New GaN state-of-the-art transistor: CHK8013-99F

The CHK8013-99F is a new GaN wideband capability transistor covering DC to 10GHz It exhibits 14W of power and a very good PAE of 70%. It enables as much as 17dB gain and a consumption as low as 180mA @30V. Designers can use the CHK8013-99F in Pulsed and operating modes. This product requires an external…
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UMS Latest News – New GH25 PDK available

UMS new products: CHA2362-99F, very low noise Amplifier CHA6551-99F, highly linear Power Amplifier New GH25 PDK available New features are now available in our GH25 Design Kit. In this new version, UMS foundry team gives you access to : • Compatibility with thermal simulation tool “ETH” from Keysight, allowing complete electro-thermal simulation of your assembled…
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S-band GaN High Power Amplifier

UMS (United Monolithic Semiconductors) announce 2 new S-band GaN High Power Amplifier: CHZ8012-QJA S-band 12W GaN High Power Amplifier Ref: CHZ8012-QJA-FULL-8323 The CHZ8012-QJA is an S-Band Quasi-MMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS…
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UMS leads the European 5G GaN progam

The fifth generation (5G) communications technologies will provide internet access to a wide range of applications: from billions of low data rate sensors to high resolution video streaming. The 5G network is designed to scale across these different use cases and will use different radio access technologies for each one. To support very high data…
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CHA6652-98F a new HPA (High Power Amplifier) 3 stage 21-27.5GHz

The CHA6652-98F is a 3 stage 21-27.5GHz High Power Amplifier delivering 2W of output power. This product exhibits a very high linearity with 39dBm OIP3, a low consumption with 6V@1.3A and an excellent PAE of 25% (between 21-24GHz) and 18% (between 24.25-27.5GHz). As with the other Telecom PAs in this range, the CHA6652-98F features an…
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MMIC Design

A Monolithic Microwave Integrated Circuit, or MMIC is a type of integrated circuit (IC) device that operates at microwave frequencies (300 MHz to 300 GHz) and fabricated using gallium arsenide (GaAs), a III-V compound semiconductor. These devices typically perform functions such as microwave mixing, power amplification, low-noise amplification, and high-frequency switching. Inputs and outputs on MMIC…
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MMIC (Monolithic Microwave IC) GaAs and GaN foundry for Telecom, Space, Defense, Automotive sectors.

CHV1203-FAA a new VCO

United Monolithic Semiconductors (UMS), European leader in RF MMIC products and foundry services for specialised markets, including Defence and Space, Telecommmunications, Automotive Radar and Industrial sensors, is pleased to announce the release of HV1203-FAA self-biased, fully integrated S Band HBT Voltage Controlled Oscillator compatible with space derating. This product is supplied in an hermetic metal…
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Microwave use

  Microwaves are electromagnetic radiation in the band of the electromagnetic spectrum with wave length between the upper ranges of radio waves and infrared radiation. Although we tend to see them as separate from radio waves, microwaves are in UHF and EHF range of radio spectrum, however, presenting the specific characteristics due to their high…
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UMS GH25-10 GaN technology Space evaluated

 UMS is proud to announce that the GH25-10 MMIC GaN HEMT technology is successfully space evaluated and now part of the European Preferred Part list (EPPL) established by the European Space Agency ESA https://escies.org/download/ The reliability study and ESCC evaluation of the technology have been supported by ESA, French MoD and CNES. This GaN 0.25µm…
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