New SiC MOSFETs for Faster Switching and Higher Efficiency
SSDI Announces New SiC MOSFETs for Faster Switching and Higher Efficiency
Solid State Devices, Inc. (SSDI) has expanded its hermetic SiC MOSFET offerings with the new SFC85N90 family. The SFC85N90 are enhancement mode, N-channel SiC MOSFETs.
These fast switching devices offer a very low RDS(on) of only 13 mΩ typ and 17 mΩ max (@ 50 A, 25°C).
These radiation tolerant SiC MOSFETs can easily replace traditional silicon MOSFETs for an immediate boost in performance and efficiency. The SFC85N90 provides a drain-source voltage of 900 volts, so it can serve as an enhanced drop-in replacement for a wide range of silicon MOSFETs even as low as 100 volts.
The SFC85N90 family is available in three high reliability, surface mount packages: the SMD1, SMD1L and SMD2.
The SMD1L ribbon leads option reduces the risk of vibration stress and solder fatigue.
SSDI also offers TX, TXV, and S level screening based on MIL-PRF-19500.
These rugged devices are ideal for aerospace and defense applications such as high voltage DC-DC converters, PFC boost converters, switch mode power supplies, motor drives, etc.
In addition to high reliability, SSDI is also known for its flexibility in delivering products that meet mission requirements. SSDI’s engineers are able to accommodate specific program needs including higher voltages and alternative packaging options.
- Fast Switching, Low Capacitance
- High Blocking Voltage, Low RDS(ON)
- Easy to Parallel, Simple to Drive
- Resistant to Latch-Up
- Hermetically Sealed Power Packaging
- TX, TXV, S-Level Screening Available
- High Voltage DC-DC Converters
- PFC Boost Converters
- Switch Mode Power Supplies
- Motor Drive
- Aerospace, Hi-Rel, Military