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Tag: GaN

UMS New GaN state-of-the-art transistor: CHK8013-99F

The CHK8013-99F is a new GaN wideband capability transistor covering DC to 10GHz It exhibits 14W of power and a very good PAE of 70%. It enables as much as 17dB gain and a consumption as low as 180mA @30V. Designers can use the CHK8013-99F in Pulsed and operating modes. This product requires an external…
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UMS launched GH15 GaN technology

UMS announced the release of its new GaN HEMT 0.15µm technology during the EuMW show in Paris, GH15 is based on SiC substrate and is well-suited for a wide range of Military, Space and Telecom applications up to 35GHz. It enables the design of high power, high linearity and high PAE products. This technology exhibits…
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SSDI Offers Industry’s Smallest High Voltage GaN Power FETs

SSDI has expanded its line of hermetic, high voltage GaN Power FETs with the SGF43E70-28. This 43 A, 700 V device is available in the LCC28 surface mount package, which has the smallest footprint (0.458″ x 0.458″ max) and lowest profile (0.095″ max) for hermetic, high voltage GaN FETs. The LCC28 package has an internal CuW…
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UMS Latest News

UMS new products: CHA2362-99F, very low noise Amplifier CHA6551-99F, highly linear Power Amplifier New GH25 PDK available New features are now available in our GH25 Design Kit. In this new version, UMS foundry team gives you access to : • Compatibility with thermal simulation tool “ETH” from Keysight, allowing complete electro-thermal simulation of your assembled…
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UMS leads the European 5G GaN progam

The fifth generation (5G) communications technologies will provide internet access to a wide range of applications: from billions of low data rate sensors to high resolution video streaming. The 5G network is designed to scale across these different use cases and will use different radio access technologies for each one. To support very high data…
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