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Tag: Aerospace

UMS New GaN state-of-the-art transistor: CHK8013-99F

The CHK8013-99F is a new GaN wideband capability transistor covering DC to 10GHz It exhibits 14W of power and a very good PAE of 70%. It enables as much as 17dB gain and a consumption as low as 180mA @30V. Designers can use the CHK8013-99F in Pulsed and operating modes. This product requires an external…
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ESCC Qualified Magnetics from FLUX Denmark

Flux Denmark designs and manufactures custom made inductors, transformers and power supplies. World leading Customers within industrial Electronics, Defence, Aerospace, Transportation, Renewable Energy & Telecommunication, Diodes for Avionic, Medical, Industrial applications in all state of the art packages. ESA Tech Flow Qualification In 2020 Flux celebrates 25 years in the Space business and a total…
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COTS Components in Space Systems: Benefits and Risks

Space is becoming a more and more competitive, asking continuously for higher performance figures while reducing the overall Cost from missions. Such a trend has consequences at all levels down to the selection and procurement of building blocks and Electronic components. The usage of COTS (Commercial Off The Shelf) or PEM / PED (Plastic Encapsulated…
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UMS launched GH15 GaN technology

UMS announced the release of its new GaN HEMT 0.15µm technology during the EuMW show in Paris, GH15 is based on SiC substrate and is well-suited for a wide range of Military, Space and Telecom applications up to 35GHz. It enables the design of high power, high linearity and high PAE products. This technology exhibits…
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CHT3091-FAA a new Attenuator

The CHT3091-FAA is a wide-band internally matched DC-14GHz attenuator in a 6x6mm SMD hermetic ceramic package. This circuit features 15dBm typical input power @ 1dB compression (any attenuation between 1 and 14GHz) and 20dB dynamic range. It has 2dB insertion loss. This product is designed on an internal GaAs 0.7µm MESFET process (Space evaluated by…
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