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Category: RF Microwave

UMS Latest News

UMS new products: CHA2362-99F, very low noise Amplifier CHA6551-99F, highly linear Power Amplifier   New GH25 PDK available New features are now available in our GH25 Design Kit. In this new version, UMS foundry team gives you access to : • Compatibility with thermal simulation tool “ETH” from Keysight, allowing complete electro-thermal simulation of your…
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CHT3091-FAA a new Attenuator

The CHT3091-FAA is a wide-band internally matched DC-14GHz attenuator in a 6x6mm SMD hermetic ceramic package. This circuit features 15dBm typical input power @ 1dB compression (any attenuation between 1 and 14GHz) and 20dB dynamic range. It has 2dB insertion loss. This product is designed on an internal GaAs 0.7µm MESFET process (Space evaluated by…
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Interpoint® GFM Series™ High Efficiency DC-DC Converter

Crane Interpoint DC-DC converters are widely used on satellites, military aircraft, military vehicles and commercial aircraft including Mars’ Rovers, Ariane 5, Joint Strike Fighter F-35 and the Apache helicopter. Compact footprint and operate over a temperature range of -55°C to +105°C. The GFM Series is a family of fully isolated DC-DC converters providing 30 watts of power…
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S-band GaN High Power Amplifier

UMS (United Monolithic Semiconductors) announce 2 new S-band GaN High Power Amplifier: CHZ8012-QJA S-band 12W GaN High Power Amplifier Ref: CHZ8012-QJA-FULL-8323 The CHZ8012-QJA is an S-Band Quasi-MMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS…
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UMS leads the European 5G GaN progam

The fifth generation (5G) communications technologies will provide internet access to a wide range of applications: from billions of low data rate sensors to high resolution video streaming. The 5G network is designed to scale across these different use cases and will use different radio access technologies for each one. To support very high data…
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