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Category: RF Microwave

UMS New GaN state-of-the-art transistor: CHK8013-99F

The CHK8013-99F is a new GaN wideband capability transistor covering DC to 10GHz It exhibits 14W of power and a very good PAE of 70%. It enables as much as 17dB gain and a consumption as low as 180mA @30V. Designers can use the CHK8013-99F in Pulsed and operating modes. This product requires an external…
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DETI – RF and Microwave assemblies

French design and manufacture for RF and microwave assemblies Deti is a French ten-person SME that designs and industrializes high technology electronic components and modules (DC – 50 GHz) for radiocommunication, telecommunications and microwave applications. Since 1995, DETI uses its know-how to develop new components and assemblies as well as for resolution of problem related…
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SSDI Offers Industry’s Smallest High Voltage GaN Power FETs

SSDI has expanded its line of hermetic, high voltage GaN Power FETs with the SGF43E70-28. This 43 A, 700 V device is available in the LCC28 surface mount package, which has the smallest footprint (0.458″ x 0.458″ max) and lowest profile (0.095″ max) for hermetic, high voltage GaN FETs. The LCC28 package has an internal CuW…
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UMS Latest News

UMS new products: CHA2362-99F, very low noise Amplifier CHA6551-99F, highly linear Power Amplifier New GH25 PDK available New features are now available in our GH25 Design Kit. In this new version, UMS foundry team gives you access to : • Compatibility with thermal simulation tool “ETH” from Keysight, allowing complete electro-thermal simulation of your assembled…
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CHT3091-FAA a new Attenuator

The CHT3091-FAA is a wide-band internally matched DC-14GHz attenuator in a 6x6mm SMD hermetic ceramic package. This circuit features 15dBm typical input power @ 1dB compression (any attenuation between 1 and 14GHz) and 20dB dynamic range. It has 2dB insertion loss. This product is designed on an internal GaAs 0.7µm MESFET process (Space evaluated by…
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