Acronyms and Symbols
| e0 | vacuum permittivity |
| er | relative dielectric constant |
| h | efficiency |
| l | wavelength |
| m | mobility |
| v | electron drift velocity |
| vsat | saturated electron velocity |
| t | time or lifetime |
| fb | barrier potential |
| fm | metal work function |
| c | electron affinity |
| 2DEG | two-Dimensional Electron Gas |
| A | emitterbase junction or diode area; proportional multiplier |
| a | physical channel depth |
| ADC | Analog-to-Digital Converter |
| Al | Aluminum |
| As | Arsenic |
| Au | Gold |
| Be | Beryllium |
| BER | Bit Error Rate |
| BJT | Bipolar Junction Transistor |
| b(x) | effective FET channel depth |
| C | Carbon |
| CAD | Computer Aided Design |
| CAE | Computer Aided Engineering |
| CCS | Collector-Substrate Capacitance |
| CDC | Drain-Channel Capacitance |
| CF | total Forward biased junction Capacitance |
| Cj | junction Capacitance; depletion region Capacitance |
| CMOS | Complimentary Metal Oxide Semiconductor (transistor) |
| Cr | Chromium |
| CTE | Coefficient of Thermal Expansion |
| Cv | Capacitance of Insulating region |
| dB | deciBels (dB = 10 log[power]) |
| DBS | Direct Broadcast Satellite |
| Dn | electron diffusivity |
| DNP | Distance Neutral Point |
| Dp | hole diffusivity |
| Ea | activation energy |
| E-B | emitterbase |
| Ec | conduction band energy |
| EDM | empirical device model |
| Ef | Fermi energy |
| Eg | bandgap energy |
| Em | breakdown electric field |
| EOS | Electrical Overstress |
| ESD | Electrostatic Discharge |
| Ev | valance band Energy |
| eV | electron Volt |
| fc | forward current cutoff frequency |
| fcc | face centered cubic |
| FEM | finite element method |
| FET | Field Effect Transistor |
| FIT | Failure In Time (1 failure/1 ´ 109 device h) |
| fmax | maximum frequency of oscillation |
| ft | cutoff frequency or frequency where unilateral power gain equals one |
| f(t) | failure rate |
| g | gram |
| GaAs | Gallium Arsenide |
| GCR | Galactic Cosmic Rays |
| Ge | Germanium |
| GEO | Geostationary Orbit |
| gm | transconductance |
| GPS | Global Positioning System |
| h | hour |
| HBT | Heterojunction Bipolar Transistor |
| HDI | High Density Interconnect |
| HEMT | High-Electron Mobility Transistor |
| hfe | current gain |
| I | current |
| ID | drain current |
| IDSS | drain-source saturation current |
| IF | intermediate frequency |
| IMPATT | impact ionization avalanche transit time (diode) |
| In | electron injection current |
| In | Indium |
| IR | infrared |
| J | current density |
| JFET | Junction Field Effect Transistor |
| J0 | constant depending on doping concentration |
| K | Kelvin |
| k | Boltzman’s constant |
| Ka | frequency band (26.540 GHz) |
| Ku | frequency band |
| L | length |
| LEC | Liquid Encapsulated Czochralski |
| LEO | Low Earth Orbit |
| LET | Linear Energy Transfer |
| LNA | low-noise amplifier |
| LO | local oscillator |
| LTCC | Low-Temperature Cofired Ceramic |
| MBE | Molecular Beam Epitaxy |
| MESFET | Metal-Semiconductor Field Effect Transistor |
| MIC | Microwave Integrated Circuit |
| MIM | Metal-Insulator-Metal (capacitor) |
| MMIC | Monolithic Microwave Integrated Circuit |
| MOCVD | Metal-Organic Chemical Vapor Deposition |
| MODFET | Modulation Doped Field Effect Transistor |
| MTBF | Mean Time Between Failure |
| MTTF | Mean Time To Failure |
| n | ideality factor |
| NA | acceptor impurity density |
| NB | base doping concentration |
| ND | donor impurity density |
| Nd | donor doping concentration |
| NE | emitter doping concentration |
| NF | noise figure |
| Ni | nickel |
| NPN | n-typep-typen-type (transistor) |
| n(x) | electron density |
| P(s) | Probability of success |
| PBM | Physically Based Model |
| Pd | palladium |
| PHEMT | pseudomorphic high-electron mobility transistor |
| PIN | p-typeinsulatorn-type (diode) |
| PIND | Particle Impact Noise Detection |
| PIX | Polyimide die overcoat |
| PM | Parametric Monitor |
| PNP | p-typen-typep-type (transistor) |
| Pout | output power |
| Pt | platinum |
| Q | quality factor |
| q | charge of an electron |
| Qc | critical charge |
| QML | Qualified Manufacturers Listing |
| r | rate of a process |
| Rb | base resistance |
| RD | drain resistance |
| RDS | channel resistance between drain and source |
| RF | radio frequency (typically refers to highest frequency in the circuit) |
| RF | total forward biased series resistance |
| RHA | radiation hardness assurance |
| RIE | reactive ion etch |
| Rj | junction resistance |
| Rohm | ohmic contact resistance |
| RS | source resistance |
| R(t) | reliability-the probability of a component surviving to time t |
| RTG | radioisotopic thermoelectric generator |
| Rv | resistance of insulating region |
| SAA | South Atlantic Anomaly |
| SCR | Silicon-Controlled Rectifier |
| SEB | single event burnout |
| SEC | standard evaluation circuit |
| SEE | Single Event Effect |
| SEGR | Single Event Gate Rupture |
| SEL | Single Event Latchup |
| SEM | Scanning Electron Microscope |
| SEU | Single Event Upset |
| Si | Silicon |
| SOI | silicon on insulator |
| SOS | silicon on sapphire |
| SPC | statistical process control |
| T | absolute temperature in Kelvin |
| t | time or carrier transit time |
| TCV | Technology Characterization Vehicle |
| TEGFET | two-dimensional electron gas Field Effect Transistor |
| TID | Total Ionizing Dose |
| TRB | Technology Review Board |
| V | voltage |
| Va | early voltage |
| VBE | baseemitter voltage |
| Vbi | built-in voltage |
| VCF | potential between conduction band and Fermi level |
| VCO | Voltage-Controlled Oscillators |
| VD | Drain bias Voltage |
| VDS | potential between drain and source |
| VG | gate bias voltage |
| VLSI | very large scale integration |
| Vp | pinch-off voltage |
| VT | thermal potential |
| W | Width |
| W | frequency band (75110 GHz); tungsten |
| WLAN | Wireless Local Area Network |
| X | frequency band (812 GHz) |
| Z | gate width; width of channel |
