Acronyms and Symbols
e0 | vacuum permittivity |
er | relative dielectric constant |
h | efficiency |
l | wavelength |
m | mobility |
v | electron drift velocity |
vsat | saturated electron velocity |
t | time or lifetime |
fb | barrier potential |
fm | metal work function |
c | electron affinity |
2DEG | two-Dimensional Electron Gas |
A | emitterbase junction or diode area; proportional multiplier |
a | physical channel depth |
ADC | Analog-to-Digital Converter |
Al | Aluminum |
As | Arsenic |
Au | Gold |
Be | Beryllium |
BER | Bit Error Rate |
BJT | Bipolar Junction Transistor |
b(x) | effective FET channel depth |
C | Carbon |
CAD | Computer Aided Design |
CAE | Computer Aided Engineering |
CCS | Collector-Substrate Capacitance |
CDC | Drain-Channel Capacitance |
CF | total Forward biased junction Capacitance |
Cj | junction Capacitance; depletion region Capacitance |
CMOS | Complimentary Metal Oxide Semiconductor (transistor) |
Cr | Chromium |
CTE | Coefficient of Thermal Expansion |
Cv | Capacitance of Insulating region |
dB | deciBels (dB = 10 log[power]) |
DBS | Direct Broadcast Satellite |
Dn | electron diffusivity |
DNP | Distance Neutral Point |
Dp | hole diffusivity |
Ea | activation energy |
E-B | emitterbase |
Ec | conduction band energy |
EDM | empirical device model |
Ef | Fermi energy |
Eg | bandgap energy |
Em | breakdown electric field |
EOS | Electrical Overstress |
ESD | Electrostatic Discharge |
Ev | valance band Energy |
eV | electron Volt |
fc | forward current cutoff frequency |
fcc | face centered cubic |
FEM | finite element method |
FET | Field Effect Transistor |
FIT | Failure In Time (1 failure/1 ´ 109 device h) |
fmax | maximum frequency of oscillation |
ft | cutoff frequency or frequency where unilateral power gain equals one |
f(t) | failure rate |
g | gram |
GaAs | Gallium Arsenide |
GCR | Galactic Cosmic Rays |
Ge | Germanium |
GEO | Geostationary Orbit |
gm | transconductance |
GPS | Global Positioning System |
h | hour |
HBT | Heterojunction Bipolar Transistor |
HDI | High Density Interconnect |
HEMT | High-Electron Mobility Transistor |
hfe | current gain |
I | current |
ID | drain current |
IDSS | drain-source saturation current |
IF | intermediate frequency |
IMPATT | impact ionization avalanche transit time (diode) |
In | electron injection current |
In | Indium |
IR | infrared |
J | current density |
JFET | Junction Field Effect Transistor |
J0 | constant depending on doping concentration |
K | Kelvin |
k | Boltzman’s constant |
Ka | frequency band (26.540 GHz) |
Ku | frequency band |
L | length |
LEC | Liquid Encapsulated Czochralski |
LEO | Low Earth Orbit |
LET | Linear Energy Transfer |
LNA | low-noise amplifier |
LO | local oscillator |
LTCC | Low-Temperature Cofired Ceramic |
MBE | Molecular Beam Epitaxy |
MESFET | Metal-Semiconductor Field Effect Transistor |
MIC | Microwave Integrated Circuit |
MIM | Metal-Insulator-Metal (capacitor) |
MMIC | Monolithic Microwave Integrated Circuit |
MOCVD | Metal-Organic Chemical Vapor Deposition |
MODFET | Modulation Doped Field Effect Transistor |
MTBF | Mean Time Between Failure |
MTTF | Mean Time To Failure |
n | ideality factor |
NA | acceptor impurity density |
NB | base doping concentration |
ND | donor impurity density |
Nd | donor doping concentration |
NE | emitter doping concentration |
NF | noise figure |
Ni | nickel |
NPN | n-typep-typen-type (transistor) |
n(x) | electron density |
P(s) | Probability of success |
PBM | Physically Based Model |
Pd | palladium |
PHEMT | pseudomorphic high-electron mobility transistor |
PIN | p-typeinsulatorn-type (diode) |
PIND | Particle Impact Noise Detection |
PIX | Polyimide die overcoat |
PM | Parametric Monitor |
PNP | p-typen-typep-type (transistor) |
Pout | output power |
Pt | platinum |
Q | quality factor |
q | charge of an electron |
Qc | critical charge |
QML | Qualified Manufacturers Listing |
r | rate of a process |
Rb | base resistance |
RD | drain resistance |
RDS | channel resistance between drain and source |
RF | radio frequency (typically refers to highest frequency in the circuit) |
RF | total forward biased series resistance |
RHA | radiation hardness assurance |
RIE | reactive ion etch |
Rj | junction resistance |
Rohm | ohmic contact resistance |
RS | source resistance |
R(t) | reliability-the probability of a component surviving to time t |
RTG | radioisotopic thermoelectric generator |
Rv | resistance of insulating region |
SAA | South Atlantic Anomaly |
SCR | Silicon-Controlled Rectifier |
SEB | single event burnout |
SEC | standard evaluation circuit |
SEE | Single Event Effect |
SEGR | Single Event Gate Rupture |
SEL | Single Event Latchup |
SEM | Scanning Electron Microscope |
SEU | Single Event Upset |
Si | Silicon |
SOI | silicon on insulator |
SOS | silicon on sapphire |
SPC | statistical process control |
T | absolute temperature in Kelvin |
t | time or carrier transit time |
TCV | Technology Characterization Vehicle |
TEGFET | two-dimensional electron gas Field Effect Transistor |
TID | Total Ionizing Dose |
TRB | Technology Review Board |
V | voltage |
Va | early voltage |
VBE | baseemitter voltage |
Vbi | built-in voltage |
VCF | potential between conduction band and Fermi level |
VCO | Voltage-Controlled Oscillators |
VD | Drain bias Voltage |
VDS | potential between drain and source |
VG | gate bias voltage |
VLSI | very large scale integration |
Vp | pinch-off voltage |
VT | thermal potential |
W | Width |
W | frequency band (75110 GHz); tungsten |
WLAN | Wireless Local Area Network |
X | frequency band (812 GHz) |
Z | gate width; width of channel |